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| SMD Type PNP Silicon Epitaxial Transistor 2SA811A SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm +0.1 2.4-0.1 Features High DC current gain. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating -120 -120 -5 -50 200 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector-emitter saturation voltage * Base-emitter voltage * Gain bandwidth product Output capacitance * Pulse test: tp 350 is; d 0.02. Symbol ICBO IEBO hFE Testconditons VCB = -120V, IE=0 VEB = -5V, IC=0 VCE = -6V , IC = -1mA VCE = -6V , IC = -0.1mA VCE(sat) IC = -10mA , IB = -1mA VBE fT Cob VCE = -6V , IC = -1mA VCE = -6V , IE = 1mA VCB = -30V , IE = 0 , f = 1.0MHz 135 100 500 500 -0.09 -0.30 -0.55 -0.61 -0.65 50 90 2.0 3.0 V V MHz pF Min Typ Max -50 -50 900 Unit nA nA hFE Classification Marking hFE C15 135 270 C16 200 400 C17 300 600 C18 450 900 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 |
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